? 2006 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 500 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c30a i dm t c = 25 c, pulse width limited by t jm 75 a i ar t c = 25 c30a e ar t c = 25 c40mj e as t c = 25 c 1.2 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 5 ? p d t c = 25 c 460 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 s 260 c m d mounting torque (to-247, to-3p) 1.13/10 nm/lb.in. f c mounting force (plus220, plus220smd) 11 65/2.5 15 n/lb. weight plus220, plus220smd 4 g to-268 5 g to-3p 5.5 g to-247 6 g g = gate d = drain s = source tab = drain ds99415e(04/06) polarhv tm power mosfet n-channel enhancement mode avalanche rated features l international standard packages l unclamped inductive switching (uis) rated l low package inductance - easy to drive and to protect ixth 30n50p ixtq 30n50p ixtt 30n50p ixtv 30n50p ixtv 30n50ps v dss = 500 v i d25 = 30 a r ds(on) 200 m ? ? ? ? ? to-247 ad (ixth) to-268 (ixtt) g s g s d plus220 (ixtv) to-3p (ixtq) g d s (tab) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 250 a 3.0 5.0 v i gss v gs = 30 v, v ds = 0 v 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 250 a r ds(on) v gs = 10 v, i d = 0.5 i d25 165 200 m ? pulse test, t 300 s, duty cycle d 2 % plus220 smd(ixtv..s) g s (tab) (tab) (tab) (tab) advantages l easy to mount l space savings l high power density
ixys reserves the right to change limits, test conditions, and dimensions. ixth 30n50p ixtq 30n50p ixtt 30n50p ixtv 30n50p ixtv 30n50ps symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 i d25 , pulse test 17 27 s c iss 4150 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 445 pf c rss 28 pf t d(on) 25 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 27 ns t d(off) r g = 5 ? (external) 75 ns t f 21 ns q g(on) 70 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 27 nc q gd 22 nc r thjc 0.27 c/w r thcs (to-247, to-3p and plus220) 0.21 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 30 a i sm repetitive 90 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 18 a, -di/dt = 100 a/ s 400 ns fig. 2. extended output characteristics @ 25 o c 0 10 20 30 40 50 60 70 0 3 6 9 12 15 18 21 24 27 30 v d s - volts i d - amperes v gs = 10v 8v 7v 6v fig. 1. output characteristics @ 25 o c 0 3 6 9 12 15 18 21 24 27 30 01234567 v d s - volts i d - amperes v gs = 10v 8v 7v 6v ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2
? 2006 ixys all rights reserved fig. 3. output characteristics @ 125 o c 0 3 6 9 12 15 18 21 24 27 30 0 2 4 6 8 101214 v d s - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction temperature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 3.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalized i d = 30a i d = 15a v gs = 10v fig. 6. drain current vs. case temperature 0 5 10 15 20 25 30 35 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) no r m aliz e d t o 0.5 i d25 value vs. i d 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 3.4 0 1020304050607080 i d - amperes r d s ( o n ) - normalized t j = 125 o c t j = 25 o c v gs = 10v fig. 7. input admittance 0 5 10 15 20 25 30 35 40 45 50 55 3.5 4 4.5 5 5.5 6 6.5 7 7.5 v g s - volts i d - amperes t j = 125 o c 25 o c -40 o c fig. 8. transconductance 0 5 10 15 20 25 30 35 40 45 50 55 60 0 5 10 15 20 25 30 35 40 45 50 55 i d - amperes g f s - siemens t j = -40 o c 25 o c 125 o c ixth 30n50p ixtq 30n50p ixtt 30n50p ixtv 30n50p ixtv 30n50ps
ixys reserves the right to change limits, test conditions, and dimensions. ixth 30n50p ixtq 30n50p ixtt 30n50p ixtv 30n50p ixtv 30n50ps fig. 11. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rs f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 10203040506070 q g - nanocoulombs v g s - volts v ds = 250v i d = 15a i g = 10ma fig. 9. source current vs. source-to-drain voltage 0 10 20 30 40 50 60 70 80 90 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 v s d - volts i s - amperes t j = 125 o c t j = 25 o c fig. 12. forw ard-bias safe ope rating are a 1 10 100 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 150oc t c = 25oc r ds(on) limit 10ms 25 s fig. 13. maximum transient thermal resistance 0.01 0.10 1.00 0.1 1 10 100 1000 puls e width - millis ec onds r ( t h ) j c - o c / w
? 2006 ixys all rights reserved package outline drawings ixth 30n50p ixtq 30n50p ixtt 30n50p ixtv 30n50p ixtv 30n50ps to-3p (ixtq) outline plus220 (ixtv) outline to-268 (ixtt) outline plus220smd (ixtv_s) outline to-247 (ixth) outline terminals: 1 - gate 2 - drain 3 - source tab - drain dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc 1 2 3
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